IDT7025S/L
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(5)
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
t
WZ
t
OW
t
SWRD
t
SPS
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
(1, 2)
Parameter
IDT7025X15
Com'l. Only
Min.
Max.
15
12
12
0
12
0
10
—
0
—
0
5
5
—
—
—
—
—
—
—
10
—
10
—
—
—
IDT7025X17
Com'l. Only
Min.
Max.
17
12
12
0
12
0
10
—
0
—
0
5
5
—
—
—
—
—
—
—
10
—
10
—
—
—
IDT7025X20
Min.
20
15
15
0
15
0
15
—
0
—
0
5
5
Max.
—
—
—
—
—
—
—
12
—
12
—
—
—
IDT7025X25
Min.
25
20
20
0
20
0
15
—
0
—
0
5
5
Max.
—
—
—
—
—
—
—
15
—
15
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Enable to Output in High-Z
Output Active from End-of-Write
(1, 2, 4)
SEM
Flag Write to Read Time
SEM
Flag Contention Window
IDT7025X35
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
t
WZ
t
OW
t
SWRD
t
SPS
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
Data Hold Time
(4)
(1, 2)
(1, 2)
(3)
IDT7025X55
Min.
55
45
45
0
40
0
30
—
0
—
0
5
5
Max.
—
—
—
—
—
—
—
25
—
25
—
—
—
Parameter
Min.
35
30
30
0
25
0
15
—
0
—
0
5
5
Max.
—
—
—
—
—
—
—
15
—
15
—
—
—
IDT7025X70
Mil. Only
Min.
Max.
70
50
50
0
50
0
40
—
0
—
0
5
5
—
—
—
—
—
—
—
30
—
30
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Enable to Output in High-Z
Output Active from End-of-Write
(1, 2, 4)
SEM
Flag Write to Read Time
SEM
Flag Contention Window
NOTES:
2683 tbl 14
1. Transition is measured
±500mV
from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE
= V
IL
,
UB
or
LB
= V
IL
,
SEM
= V
IH
. To access semaphore,
CE
= V
IH
or
UB
&
LB
= V
IH,
and
SEM
= V
IL
. Either condition must be
valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. "X" in part numbers indicates power rating (S or L).
6.16
9
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
