IDT7025S/L
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(Cont'd.)
(V
CC
= 5.0V
±
10%)
7025X35
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
I
SB1
Standby Current
(Both Ports — TTL
Level Inputs)
I
SB2
Standby Current
(One Port — TTL
Level Inputs)
I
SB3
Full Standby Current
(Both Ports — All
CMOS Level Inputs)
Test
Condition
Version
MIL.
COM’L.
MIL.
COM’L.
MIL.
COM’L.
MIL.
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
Typ.
(2)
150
150
150
150
13
13
13
13
85
85
85
85
1.0
0.2
1.0
0.2
80
80
80
80
Max.
300
250
250
210
80
65
60
50
190
160
155
130
30
10
15
5
175
150
135
110
7025X55
Typ.
(2)
150
150
150
150
13
13
13
13
85
85
85
85
1.0
0.2
1.0
0.2
80
80
80
80
7025X70
Mil. Only
Max. Typ.
(2)
Max. Unit
300
250
250
210
80
65
60
50
190
160
155
130
30
10
15
5
175
150
135
110
140
140
—
—
10
10
—
—
80
80
—
—
1.0
0.2
—
—
75
75
—
—
300
250
—
—
80
65
—
—
190
160
—
—
30
10
—
—
175
150
—
—
mA
mA
mA
mA
mA
CE
= V
IL
, Outputs Open
SEM
= V
IH
f = f
MAX(3)
CE
L
=
CE
R
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX(3)
CE
"A"
=V
IL and
CE
"B"
=V
IH(5)
Active Port Outputs Open
f = f
MAX
(3)
SEM
R
=
SEM
L
= V
IH
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
COM’L.
(4)
V
IN
< 0.2V, f = 0
SEM
R
=
SEM
L
> V
CC
- 0.2V
I
SB4
Full Standby Current
(One Port — All
CMOS Level Inputs)
CE
"A"
< 0.2 and
MIL.
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
COM’L.
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V,
Active Port Outputs Open,
f = f
MAX(3)
NOTES:
2683 tbl 10
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25°C, and are not production tested.
3. At f = f
MAX
,
address and I/O'
S
are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES (L Version Only)
(V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
(4)
Symbol
V
DR
I
CCDR
t
CDR
t
R
(3)
(3)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Test Condition
V
CC
= 2V
CE
Min.
2.0
Typ.
(1)
—
100
100
—
—
Max.
—
4000
1500
—
—
Unit
V
µA
ns
ns
2683 tbl 11
> V
HC
> V
HC
MIL.
COM’L.
—
—
0
t
RC(2)
V
IN
> V
HC
or < V
LC
SEM
NOTES:
1. T
A
= +25°C, V
CC
= 2V, and are by characterization but are not production tested.
2. t
RC
= Read Cycle Time
3. This parameter is guaranteed by device characterization but are not production tested.
4
.
At Vcc < 2.0V, input leakages are not defined.
DATA RETENTION WAVEFORM
DATA RETENTION MODE
V
CC
4.5V
t
CDR
V
DR
≥
2V
V
DR
4.5V
t
R
V
IH
2683 drw 05
CE
V
IH
6.16
6
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
