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IDT7025L35PF 参数 Datasheet PDF下载

IDT7025L35PF图片预览
型号: IDT7025L35PF
PDF下载: 下载PDF文件 查看货源
内容描述: 高速8K ×16双口静态RAM [HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM]
分类和应用:
文件页数/大小: 20 页 / 294 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7025S/L  
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL  
Inputs(1)  
Outputs  
CE  
R/W  
X
OE UB  
LB  
X
H
H
L
SEM  
H
I/O8-15  
I/O0-7  
Mode  
H
X
X
X
X
X
L
X
H
L
High-Z  
High-Z  
DATAIN  
High-Z  
High-Z Deselected: Power Down  
High-Z Both Bytes Deselected  
High-Z Write to Upper Byte Only  
DATAIN Write to Lower Byte Only  
X
X
H
L
L
H
L
L
H
L
H
L
L
L
H
DATAIN DATAIN Write to Both Bytes  
DATAOUT High-Z Read Upper Byte Only  
High-Z DATAOUT Read Lower Byte Only  
DATAOUT DATAOUT Read Both Bytes  
L
H
H
H
X
L
H
L
H
L
L
L
H
L
H
L
L
H
X
H
X
X
X
High-Z  
High-Z Outputs Disabled  
NOTE:  
2683 tbl 03  
1. A0L — A12L are not equal to A0R — A12R.  
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL(1)  
Inputs  
Outputs  
CE  
R/W  
H
OE  
UB  
X
LB  
X
SEM  
I/O8-15  
I/O0-7  
Mode  
H
L
L
L
L
L
L
L
L
DATAOUT DATAOUT Read Semaphore Flag Data Out  
DATAOUT DATAOUT Read Semaphore Flag Data Out  
DATAIN DATAIN Write I/O0 into Semaphore Flag  
DATAIN DATAIN Write I/O0 into Semaphore Flag  
X
H
H
X
H
X
H
X
X
X
X
X
H
L
H
X
L
L
X
X
Not Allowed  
Not Allowed  
X
L
NOTE:  
2683 tbl 04  
1. There are eight semaphore flags written to via I/O0 and read from I/O0 - I/O15. These eight semaphores are addressed by A0 - A2.  
ABSOLUTE MAXIMUM RATINGS(1)  
RECOMMENDED DC OPERATING  
CONDITIONS  
Symbol  
Rating  
Commercial  
Military  
Unit  
Symbol  
Parameter  
Supply Voltage  
Supply Voltage  
Min. Typ. Max. Unit  
(2)  
VTERM  
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0  
with Respect  
to GND  
V
VCC  
4.5  
0
5.0  
0
5.5  
0
V
V
V
V
GND  
6.0(2)  
TA  
Operating  
0 to +70  
–55 to +125 °C  
VIH  
VIL  
Input High Voltage  
Input Low Voltage  
2.2  
–0.5(1)  
Temperature  
0.8  
TBIAS  
TSTG  
IOUT  
Temperature  
Under Bias  
–55 to +125 –65 to +135 °C  
–55 to +125 –65 to +150 °C  
NOTES:  
2683 tbl 06  
1. VIL > -1.5V for pulse width less than 10ns.  
2. VTERM must not exceed Vcc + 0.5V.  
Storage  
Temperature  
DC Output  
Current  
50  
50  
mA  
CAPACITANCE(1)  
(TA = +25°C, f = 1.0MHz)TQFP ONLY  
NOTES:  
2683 tbl 05  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM  
RATINGS may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device at these or any other  
conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
Symbol  
CIN  
Parameter  
Conditions(2) Max. Unit  
Input Capacitance  
VIN = 3dV  
9
pF  
pF  
COUT  
Output  
VOUT = 3dV  
10  
Capacitance  
2. VTERM must not exceed Vcc + 0.5V for more than 25% of the cycle time  
or 10ns maximum, and is limited to < 20 mA for the period over VTERM  
> Vcc + 0.5V.  
NOTES:  
2683 tbl 07  
1. This parameter is determined by device characterization but is not  
production tested.  
2. 3dV references the interpolated capacitance when the input and output  
signals switch from 0V to 3V or from 3V to 0V.  
6.16  
4