IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%)
IDT7164S
Symbol
|I
LI
|
|I
LO
|
V
OL
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Test Condition
V
CC
= Max.,
V
IN
= GND to V
CC
V
CC
= Max.,
CS
1
= V
IH,
V
OUT
= GND to V
CC
I
OL
= 8mA, V
CC
= Min.
I
OL
= 10mA, V
CC
= Min.
V
OH
Output High Voltage
I
OH
= –4mA, V
CC
= Min.
—
2.4
MIL.
COM’L.
MIL.
COM’L.
Min.
—
—
—
—
Max.
10
5
10
5
0.4
0.5
—
IDT7164L
Min.
—
—
—
—
—
—
2.4
Max.
5
2
5
2
0.4
0.5
—
V
2967 tbl 08
Unit
µA
µA
V
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(L Version Only) (V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
Typ.
(1)
V
CC
@
Symbol
V
DR
I
CCDR
t
CDR(3)
t
R(3)
|I
LI
|
(3)
Max.
V
CC
@
2.0V
—
200
60
—
—
2
3.0V
—
300
90
—
—
2
Unit
V
µA
ns
ns
µA
2967 tbl 09
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
Test Condition
—
MIL.
COM’L.
1.
CS
1
≥
V
HC
CS
2
≥
V
HC
, or
2. CS
2
≤
V
LC
Min.
2.0
—
—
0
t
RC(2)
—
2.0v
—
10
10
—
—
—
3.0V
—
15
15
—
—
—
NOTES:
1. T
A
= +25°C.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2967 tbl 10
5V
480Ω
DATA
OUT
255Ω
30pF*
5V
480Ω
DATA
OUT
255Ω
5pF*
2967 drw 03
2967 drw 04
Figure 1. AC Test Load
Figure 2. AC Test Load
(for t
CLZ1,
t
CLZ2
, t
OLZ
, t
CHZ1,
t
CHZ2
, t
OHZ
, t
OW
, and t
WHZ
)
*Includes scope and jig capacitances
6.1
4
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
