BSC025N03LS G
OptiMOS™3
Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel; Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC025N03LS G
Package
PG-TDSON-8
Marking
025N03LS
Product Summary
V
DS
R
DS(on),max
I
D
30
2.5
100
PG-TDSON-8
V
mΩ
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
Value
100
93
100
77
Unit
A
25
400
50
135
6
±20
mJ
kV/µs
V
I
D,pulse
I
AS
E
AS
dv /dt
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=50 A,
R
GS
=25
Ω
I
D
=50 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=150 °C
J-STD20 and JESD22
Rev. 1.6
page 1
2009-10-22
INFINEON [ INFINEON TECHNOLOGIES AG ]
