High Current PN Half Bridge
BTN8982TA
Block Description and Characteristics
5.2
Power Stages
The power stages of the BTN8982TA consist of a p-channel vertical DMOS transistor for the high side switch and
a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in
a separate top chip. Both switches allow active freewheeling and thus minimizing power dissipation during PWM
control.
The on state resistance
R
ON
is dependent on the supply voltage
V
S
as well as on the junction temperature
T
j
. The
typical on state resistance characteristics are shown in
High Side Switch
R
ON(HS)
[mΩ]
Low Side Switch
R
ON(LS)
[mΩ]
T
j
= 150°C
T
j
= 150°C
T
j
= 25°C
T
j
= 25°C
T
j
= -40°C
T
j
= -40°C
V
S
[V]
V
S
[V]
Figure 6
Typical ON State Resistance vs. Supply Voltage
Data Sheet
10
Rev. 1.0, 2013-05-17
INFINEON [ INFINEON TECHNOLOGIES AG ]
