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IRF530N 参数 Datasheet PDF下载

IRF530N图片预览
型号: IRF530N
PDF下载: 下载PDF文件 查看货源
内容描述: 22A , 100V , 0.064 Ohm的N通道功率MOSFET [22A, 100V, 0.064 Ohm, N-Channel Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 128 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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IRF530N
Typical Performance Curves
300
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
(Continued)
100
I
D
, DRAIN CURRENT (A)
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
AS
, AVALANCHE CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1ms
10ms
100
300
10
0.001
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
30
40
V
GS
= 20V
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
I
D,
DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
30
20
T
J
= 175
o
C
10
20
V
GS
=5V
T
J
= -55
o
C
T
J
= 25
o
C
10
0
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
3.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION =
80µs
DUTY CYCLE = 0.5% MAX
2.5
V
GS
= 10V, I
D
= 22A
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
V
GS
= V
DS
, I
D
= 250µA
2.0
1.5
1.0
0.5
0
-80
-40
160
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
200
1.0
0.8
0.6
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4