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IRF530N 参数 Datasheet PDF下载

IRF530N图片预览
型号: IRF530N
PDF下载: 下载PDF文件 查看货源
内容描述: 22A , 100V , 0.064 Ohm的N通道功率MOSFET [22A, 100V, 0.064 Ohm, N-Channel Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 128 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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IRF530N
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
(Continued)
2000
V
GS
= 0V, f = 1MHz
1000
C, CAPACITANCE (pF)
I
D
= 250µA
1.1
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
1.0
100
C
RSS
=
C
GD
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
20
0.1
1.0
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 50V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 22A
I
D
= 11A
0
5
15
10
Q
g
, GATE CHARGE (nC)
20
25
2
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
V
DS
BV
DSS
L
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
R
G
I
AS
V
DD
-
t
P
V
DS
V
DD
+
0V
I
AS
0.01Ω
0
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
5