IRF9510
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9510
-100
-100
-3.0
-2.0
-12
±20
20
0.16
190
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
TEST CONDITIONS
V
GS
= 0V, I
D
= -250µA, (Figure 10)
V
GS
= V
DS
, I
D
= -250µA
V
GS
=
±20V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= -10V,
(Figure 7)
V
GS
= -10V, I
D
= -1.5A, (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)
Max, I
D
= -1.5A,
(Figure 12)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈
-3.0A,
R
G
= 50Ω, V
GS
= 10V, (Figures 17, 18)
R
L
= 15.7Ω for V
DSS =
50V
R
L
= 12.3Ω for V
DSS
= 40V
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
V
GS
= -10V, I
D
= -3A, V
DS
= 0.8 x Rated BV
DSS,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
V
GS
= 0V, V
DS
= -25V, f = 1.0MHz,
(Figure 11)
MIN
-100
-2.0
-
-
-
-3.0
-
0.8
-
-
-
-
TYP
-
-
-
-
-
-
1.000
1.1
15
30
20
20
MAX
-
-4.0
±100
-25
-250
-
1.200
-
30
60
40
40
UNITS
V
V
nA
µA
µA
A
Ω
S
ns
ns
ns
ns
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Gate to Source Leakage Current
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
-
-
-
-
-
-
8.5
3.8
4.7
180
85
30
3.5
11
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
nH
Measured From the
Contact Screw on Tab
to Center of Die
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
D
L
D
G
L
S
S
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
Typical Socket Mount
-
7.5
-
nH
Junction to Case
Junction to Ambient
R
θJC
R
θJA
-
-
-
-
6.4
62.5
o
C/W
o
C/W
5-4
INTERSIL [ INTERSIL CORPORATION ]
