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IRF9510 参数 Datasheet PDF下载

IRF9510图片预览
型号: IRF9510
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0A , 100V , 1.200欧姆,P沟道功率MOSFET [3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 7 页 / 63 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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IRF9510
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-5
10µs
10
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
100µs
-4
V
GS
= -9V
V
GS
= -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-3
V
GS
= -8V
1ms
1
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
10ms
100ms
DC
-2
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
-1
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
2
0
0
-10
-20
-30
-40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
-5
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= -10V
V
GS
= -9V
-12.0
V
DS
> I
D(ON)
x R
DS(ON)MAX.
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
-4
-9.6
-3
V
GS
= -8V
-7.2
T
J
= 125
o
C
-4.8
T
J
= 25
o
C
T
J
= -55
o
C
-2
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
-1
-2.4
0
0
-2
-4
-6
-8
-10
0
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-2
-4
-6
-8
V
GS
, GATE TO SOURCE VOLTAGE (V)
-10
FIGURE 6. SATURATION CHARACTERISTICS
r
DS(ON)
, DRAIN TO SOURCE ON RESISTANCE
FIGURE 7. TRANSFER CHARACTERISTICS
5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE VOLTAGE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
2.5
2.0
V
GS
= -10V, I
D
= -1.5A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
V
GS
= -10V
2
V
GS
= -20V
1
1.5
1.0
0.5
0
0
-4
-8
-12
I
D,
DRAIN CURRENT (A)
-16
-20
0
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
5-6