IRF9510
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
-3.0
-12
UNITS
A
A
S
Source to Drain Diode Voltage(Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
C
= 25
o
C, I
SD
= -3.0A, V
GS
= 0V, (Figure 13)
T
J
= 150
o
C, I
SD
= -3.0A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= -3.0A, dI
SD
/dt = 100A/µs
-
-
-
-
120
6.0
-1.5
-
-
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 31.7mH, R
G
= 25Ω, peak I
AS
= 3.0A. See Figures 15, 16.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
Unless Otherwise Specified
-5
I
D,
DRAIN CURRENT (A)
-4
-3
0.6
0.4
-2
0.2
0
0
25
50
75
100
T
C,
CASE TEMPERATURE (
o
C)
125
150
-1
0
25
50
75
100
125
T
C,
CASE TEMPERATURE (
o
C)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Z
θJC
, NORMALIZED TRANSIENT
THERMAL IMPEDANCE
1
0.5
P
DM
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE PULSE
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
0.1
1
10
0.01
10
-5
10
-4
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
5-5
INTERSIL [ INTERSIL CORPORATION ]
