IRF9520
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9520
-100
-100
-6
-4
-24
±20
40
0.32
370
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
=100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= -250µA, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= -250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
C
= 125
o
C
MIN
-100
-2
-
-
-6
-
-
0.9
-
-
-
-
V
GS
= -10V, I
D
= -6A, V
DS
= 0.8 x Rated BV
DSS
(Figure 14) Gate Charge is Essentially
Independent of Operating Temperature
-
-
-
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 11)
-
-
-
Measured From the
Modified MOSFET
Contact Screw on Tab To Symbol Showing the
Center of Die
Internal Devices
Measured From the Drain Inductances
Lead, 6mm (0.25in) from
Package to Center of Die
D
L
D
TYP
-
-
-
-
-
-
0.500
2
25
50
50
50
16
9
7
300
200
50
3.5
MAX
-
-4
-25
-250
-
±100
0.600
-
50
100
100
100
22
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= -10V
V
GS
=
±20V
I
D
= -3.5A, V
GS
= -10V (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= -3.5A
( Figure 12)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈
-6.0A,
R
G
= 50Ω , R
L
= 7.7Ω for V
DSS
= 50Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
G
L
S
S
7.5
-
nH
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
R
θJC
R
θJA
Typical Socket Mount
-
-
-
-
3.12
62.5
o
C/W
o
C/W
4-4
INTERSIL [ INTERSIL CORPORATION ]
