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IRF9520 参数 Datasheet PDF下载

IRF9520图片预览
型号: IRF9520
PDF下载: 下载PDF文件 查看货源
内容描述: 6A , 100V , 0.600欧姆,P沟道功率MOSFET [6A, 100V, 0.600 Ohm, P-Channel Power MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 7 页 / 61 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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IRF9520
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-10
10µs
-8
I
D
, DRAIN CURRENT (A)
10
100µs
I
D
, DRAIN CURRENT (A)
V
GS
= -10V
V
GS
= -9V
V
GS
= -8V
1ms
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
-6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
GS
= -7V
1
10ms
100ms
DC
-4
V
GS
= -6V
-2
T
C
= 25
o
C
T
J
= MAX RATED
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
V
GS
= -5V
V
GS
= -4V
0
0
-10
-20
-30
-40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
-5
V
GS
= -8V
V
GS
= -9V
-3
V
GS
= -10V
V
GS
= -6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
GS
= -5V
-1
V
GS
= -4V
0
0
-4
-2
-3
-1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-5
V
GS
= -7V
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
-10
I
D
, DRAIN CURRENT (A)
-4
V
DS
I
D(ON)
x r
DS(ON)
MAX
PULSE DURATION = 80µs
-8 DUTY CYCLE = 0.5% MAX.
T
J
= 125
o
C
-6
T
J
= 25
o
C
T
J
= -55
o
C
-2
-4
-2
0
0
-2
-4
-6
-8
V
GS
, GATE TO SOURCE VOLTAGE (V)
-10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
2.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
1.6
2.2
V
GS
= -10V, I
D
= -4A
PULSE DURATION = 80µs
1.8 DUTY CYCLE = 0.5% MAX.
1.2
V
GS
= -10V
0.8
1.4
1.0
0.4
V
GS
= -20V
0.6
0
0.2
0
-5
-10
-15
I
D
, DRAIN CURRENT (A)
-20
-25
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-6