IRF9520
Typical Performance Curves
1.25
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.15
C, CAPACITANCE (pF)
400
C
ISS
300
C
OSS
Unless Otherwise Specified
(Continued)
500
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
1.05
0.95
200
0.85
100
C
RSS
0.75
-40
0
40
80
120
160
0
0
-10
-20
-30
-40
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
3
g
fs
, TRANSCONDUCTANCE (S)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
I
SD
, DRAIN CURRENT (A)
-100
2
T
J
= -55
o
C
T
J
= 25
o
C
1
T
J
= 125
o
C
-10
T
J
= 150
o
C
-1.0
T
J
= 25
o
C
0
0
-2
-4
-6
I
D
, DRAIN CURRENT (A)
-8
-10
-0.1
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
I
D
= -6A
V
GS
, GATE TO SOURCE (V)
-5
V
DS
= -80V
-10
V
DS
= -50V
V
DS
= -20V
0
4
8
12
16
20
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-7
INTERSIL [ INTERSIL CORPORATION ]
