IRF640N/S/L
2500
2000
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = C
gd
Coss = Cds + Cgd
20
I
D
=
11A
16
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
C, Capacitance(pF)
1500
Ciss
12
1000
8
Coss
500
4
Crss
0
1
10
100
1000
0
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
100
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175
°
C
10
I
D
, Drain Current (A)
100
10us
T
J
= 25
°
C
1
10
100us
1ms
1
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
0.1
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
1
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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