IRFP4227PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gd
t
st
E
PULSE
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Drain Charge
Shoot Through Blocking Time
Energy per Pulse
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
49
–––
–––
100
–––
–––
Typ. Max. Units
–––
170
21
–––
-13
–––
–––
–––
–––
–––
70
23
–––
570
910
4600
460
91
360
5.0
13
–––
–––
25
5.0
–––
20
1.0
100
-100
–––
98
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
pF
ns
µJ
S
nC
V
mΩ
V
mV/°C
µA
mA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 46A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 200V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 46A
V
DD
= 100V, I
D
= 46A, V
GS
= 10Ve
V
DD
= 160V, V
GS
= 15V, R
G
= 4.7Ω
L = 220nH, C= 0.4µF, V
GS
= 15V
V
DS
= 160V, R
G
= 4.7Ω, T
J
= 25°C
L = 220nH, C= 0.4µF, V
GS
= 15V
V
DS
= 160V, R
G
= 4.7Ω, T
J
= 100°C
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,
V
GS
= 0V, V
DS
= 0V to 160V
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
S
D
mV/°C Reference to 25°C, I
D
= 1mA
C
iss
C
oss
C
rss
C
oss
eff.
L
D
L
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
–––
–––
Avalanche Characteristics
Parameter
Typ.
Max.
Units
mJ
mJ
V
A
E
AS
E
AR
V
DS(Avalanche)
I
AS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy
c
Repetitive Avalanche Voltage
Avalanche Current
d
c
–––
–––
240
–––
140
33
–––
39
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
(Body Diode)
I
SM
V
SD
t
rr
Q
rr
Pulsed Source Current
(Body Diode)
c
–––
–––
–––
–––
100
430
1.3
150
640
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
260
Min.
–––
Typ. Max. Units
–––
65
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 46A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 46A, V
DD
= 50V
di/dt = 100A/µs
e
2
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