IRFP4227PbF
600
500
400
300
200
100
0
0.16
0.12
0.08
0.04
0.00
I
I
= 46A
D
D
TOP
8.6A
14A
39A
BOTTOM
T
T
= 125°C
J
= 25°C
9
J
5
6
7
8
10
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
GS
J
Fig 13. On-Resistance Vs. Gate Voltage
Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0
200
ton= 1µs
Duty cycle = 0.25
4.5
4.0
Half Sine Wave
Square Pulse
160
I
= 250µA
D
120
3.5
3.0
2.5
2.0
1.5
80
40
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
175
T
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.08698 0.000074
R1
τ
JτJ
τ
τ
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.2112 0.001316
0.1506 0.009395
0.02
0.01
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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