IRFP4227PbF
1400
1000.0
100.0
10.0
1.0
L = 220nH
1200
C= 0.4µF
C= 0.3µF
C= 0.2µF
1000
800
600
400
200
0
T
= 175°C
J
T
= 25°C
0.8
J
V
= 0V
GS
1.0
0.1
25
50
75
100
125
150
0.2
0.4
0.6
1.2
Temperature (°C)
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical EPULSE vs.Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
8000
20
V
C
= 0V,
f = 1 MHZ
GS
I = 46A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C
rss
gd
16
12
8
C
= C + C
6000
4000
2000
0
oss ds
gd
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
120
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
70
60
50
40
30
20
10
0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1µsec
100
10
1
100µsec
10µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
1
10
100
1000
T
, CaseTemperature (°C)
V
, Drain-to-Source Voltage (V)
C
DS
Fig 12. Maximum Safe Operating Area
Fig 11. Maximum Drain Current vs. Case Temperature
4
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