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IS41LV16256-35T 参数 Datasheet PDF下载

IS41LV16256-35T图片预览
型号: IS41LV16256-35T
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16 ( 4兆位)动态RAM与EDO页模式 [256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE]
分类和应用:
文件页数/大小: 19 页 / 154 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS41C16256
IS41LV16256
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-35
Symbol
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
t
RAD
t
RAL
t
RPC
t
RSH
t
CLZ
t
CRP
t
OD
t
OE
/ t
OEA
t
OEHC
t
OEP
t
OES
t
RCS
t
RRH
t
RCH
t
WCH
t
WCR
Parameter
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(26)
CAS
Precharge Time
(9, 25)
CAS
Hold Time
(21)
ISSI
-50
Min.
90
50
50
30
8
8
50
19
0
8
0
8
40
14
25
0
14
3
5
3
0
10
10
5
0
0
0
8
40
Max
14
25
10K
10K
36
25
12
15
10
18
10K
10K
28
20
12
10
-60
Min. Max.
110
60
60
40
10
10
60
20
0
10
0
10
40
15
30
0
15
3
5
3
10
10
5
0
0
0
10
50
ns
15
30
10K
10K
45
30
12
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Min. Max.
60
35
35
20
6
5
35
11
0
6
0
6
30
10
18
0
8
3
5
3
0
10
10
5
0
0
0
5
30
®
Units
ns
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
Column-Address Hold Time
(referenced to
RAS)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
(27)
CAS
to Output in Low-Z
(15, 29)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 28, 29)
Output Enable Time
(15, 16)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS)
(12)
Read Command Hold Time
(referenced to
CAS)
(12, 17, 21)
Write Command Hold Time
(17, 27)
Write Command Hold Time
(referenced to
RAS)
(17)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
7