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IS41LV16256-35T 参数 Datasheet PDF下载

IS41LV16256-35T图片预览
型号: IS41LV16256-35T
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16 ( 4兆位)动态RAM与EDO页模式 [256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE]
分类和应用:
文件页数/大小: 19 页 / 154 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS41C16256
IS41LV16256
TRUTH TABLE
Function
Standby
Read: Word
Read: Lower Byte
Read: Upper Byte
Write: Word (Early Write)
Write: Lower Byte (Early Write)
Write: Upper Byte (Early Write)
Read-Write
(1,2)
EDO Page-Mode Read
(2)
1st Cycle:
2nd Cycle:
Any Cycle:
EDO Page-Mode Write
(1)
1st Cycle:
2nd Cycle:
EDO Page-Mode
Read-Write
(1,2)
Hidden Refresh
2)
RAS-Only
Refresh
CBR Refresh
(3)
1st Cycle:
2nd Cycle:
RAS
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
LCAS UCAS
H
L
L
H
L
L
H
L
H→L
H→L
L→H
H→L
H→L
H→L
H→L
L
L
H
L
H
L
H
L
L
H
L
L
H→L
H→L
L→H
H→L
H→L
H→L
H→L
L
L
H
L
WE
X
H
H
H
L
L
L
H→L
H
H
H
L
L
H→L
H→L
H
L
X
X
OE
X
L
L
L
X
X
X
L→H
L
L
L
X
X
L→H
L→H
L
X
X
X
Address t
R
/t
C
X
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
NA/COL
NA/NA
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
I/O
ISSI
High-Z
D
OUT
Lower Byte, D
OUT
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
OUT
D
IN
Lower Byte, D
IN
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
®
Read L→H→L
Write L→H→L
L
H→L
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. At least one of the two
CAS
signals must be active (LCAS or
UCAS).
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
3