IS63LV1024L
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High-Z
High-Z
D
OUT
D
IN
Vcc Current
I
SB
1
, I
SB
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
ISSI
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
–0.5 to Vcc + 0.5
–55 to +125
–65 to +150
1.0
Unit
V
°C
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
3.3V ± 0.3V
3.3V ± 0.15V
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Com.
Ind.
Com.
Ind.
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.2
–0.3
–1
–5
–1
–5
Max.
—
0.4
V
CC
+ 0.3
0.8
1
5
1
5
Unit
V
V
V
V
µA
µA
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
08/07/02
3
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
