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IS63LV1024L-8TI 参数 Datasheet PDF下载

IS63LV1024L-8TI图片预览
型号: IS63LV1024L-8TI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM 3.3V革命引脚 [128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT]
分类和应用:
文件页数/大小: 9 页 / 46 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS63LV1024L
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
1
I
SB
Vcc Operating
Supply Current
TTL Standby
Current
(TTL Inputs)
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
Test Conditions
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = Max
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
V
CC
= Max.,
CE
V
CC
– 0.2V,
V
IN
V
CC
– 0.2V, or
V
IN
0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Ind.
-8 ns
Min. Max.
100
110
35
40
15
20
1
1.5
-10 ns
Min. Max.
95
105
30
35
15
20
1
1.5
ISSI
-12 ns
Min. Max.
90
100
25
30
15
20
1
1.5
®
Unit
mA
mA
I
SB
1
mA
I
SB
2
mA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1,2)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
08/07/02