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IS63LV1024L-8TI 参数 Datasheet PDF下载

IS63LV1024L-8TI图片预览
型号: IS63LV1024L-8TI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM 3.3V革命引脚 [128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT]
分类和应用:
文件页数/大小: 9 页 / 46 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS63LV1024L
AC WAVEFORMS
WRITE CYCLE NO. 2
(1)
(WE Controlled,
OE
= HIGH during Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
ISSI
®
t
HA
OE
CE
LOW
t
AW
t
PWE1
WE
t
SA
D
OUT
DATA UNDEFINED
t
HZWE
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
CE_WR2.eps
WRITE CYCLE NO. 3
(WE Controlled:
OE
is LOW During Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
OE
CE
LOW
t
HA
LOW
t
AW
t
PWE2
WE
t
SA
D
OUT
DATA UNDEFINED
t
HZWE
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
CE_WR3.eps
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
• V
IH
.
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
08/07/02