IXTH 11N80 IXTH 13N80
IXTM 11N80 IXTM 13N80
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
8
14
4500
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
310
65
20
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
Ω,
(External)
33
63
32
145
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
30
55
50
50
100
50
170
45
80
0.42
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
1
2
3
TO-247 AD (IXTH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
Dim.
A
A
1
A
2
b
b
1
b
2
Millimeter
Min. Max.
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
Inches
Min. Max.
.185
.087
.059
.040
.065
.113
.209
.102
.098
.055
.084
.123
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
11N80
13N80
11N80
13N80
11
13
44
52
1.5
800
A
A
A
A
V
ns
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-204AA (IXTM) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
Millimeter
Min. Max.
A
6.4
11.4
A1
3.42
∅b
.97
1.09
∅D
22.22
e
10.67 11.17
e1
5.21
5.71
L
7.93
∅p
3.84
4.19
∅p1
3.84
4.19
q
30.15 BSC
R
13.33
R1
4.77
s
16.64 17.14
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS [ IXYS CORPORATION ]
