IXTH 11N80
IXTM 11N80
IXTH 13N80
IXTM 13N80
Fig.7 Gate Charge Characteristic Curve
10
Fig.8 Forward Bias Safe Operating Area
10µs
8
V
DS
= 400V
I
D
= 13A
Limited by R
DS(on)
100µs
6
4
2
0
0
25
50
75
100
125
150
I
D
- Amperes
I
G
= 10mA
10
1ms
10ms
100ms
V
GE
- Volts
1
0.1
1
10
100
1000
Gate Charge - nCoulombs
V
DS
- Volts
Fig.9 Capacitance Curves
4500
4000
C
iss
Fig.10 Source Current vs. Source
to Drain Voltage
18
16
14
Capacitance - pF
3500
2500
2000
1500
1000
500
0
0
5
f = 1 MHz
V
DS
= 25V
I
D
- Amperes
3000
12
10
8
6
4
2
T
J
= 125°C
T
J
= 25°C
C
oss
C
rss
10
15
20
25
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
- Volts
V
SD
- Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01
D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS [ IXYS CORPORATION ]
