Specifications ispGDX Family
Switching Test Conditions
Input Pulse Levels
GND to 3.0V
≤ 1.5ns 10% to 90%
1.5V
+ 5V
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
R
1
2
Device
Output
Test
Point
1.5V
See figure at right
R
C *
L
3-state levels are measured 0.5V from steady-state
active level.
Output Load Conditions
*
C includes Test Fixture and Probe Capacitance.
L
TEST CONDITION
R1
160Ω
∞
R2
CL
A
B
90Ω
90Ω
90Ω
35pF
35pF
35pF
Active High
Active Low
160Ω
Active High to Z
∞
90Ω
90Ω
5pF
at VOH-0.5V
C
Active Low to Z
at VOL+0.5V
160Ω
5pF
Table 2 - 0004A
DC Electrical Characteristics
Over Recommended Operating Conditions
2
SYMBOL
PARAMETER
Output Low Voltage
CONDITION
IOL =24 mA
MIN. TYP.
MAX.
0.55
–
UNITS
V
–
2.4
–
–
–
VOL
VOH
IIL
IIH
IIL-isp
IIL-PU
IOS1
ICCQ
V
Output High Voltage
IOH =-24 mA
0V ≤ VIN ≤ VIL (MAX.)
3.5V ≤ VIN ≤ VCC
–
-10
10
µA
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
ispEN Input Low Leakage Current
I/O Active Pull-Up Current
–
–
µA
0V ≤ VIN ≤ VIL (MAX.)
0V ≤ VIN ≤ VIL
–
–
-150
-150
-250
40
µA
–
–
µA
VCC = 5V, VOUT = 0.5V, TA = 25˚C
VIL = 0.5V, VIH = VCC
-100
–
–
mA
Output Short Circuit Current
Quiescent Power Supply Current
25
mA
One input toggling @ 50% duty cycle,
outputs open.
–
–
mA/MHz
Dynamic Power Supply Current
per Input Switching
See
ICC
Note 3
1. One output at a time for a maximum duration of one second. VOUT = 0.5V was selected to avoid test problems by tester ground
degradation. Characterized but not 100% tested.
2. Typical values are at VCC = 5V and T = 25oC.
A
3. ICC / MHz = (0.0114 x I/O cell fanout) + 0.06
e.g. An input driving four I/O cells at 40 MHz results in a dynamic ICC of approximately ((0.0114 x 4) + 0.06) x 40 = 4.2 mA.
7
LATTICE [ LATTICE SEMICONDUCTOR ]
