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GM71C4403CR 参数 Datasheet PDF下载

GM71C4403CR图片预览
型号: GM71C4403CR
PDF下载: 下载PDF文件 查看货源
内容描述: 1,048,576字× 4BIT CMOS动态RAM [1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 10 页 / 112 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon
Write Cycle
Symbol
Parameter
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
GM71C4403
C-60
GM71C4403
C-70
GM71C4403C
GM71C4403
C-80
Min Max Min Max Min Max
0
10
10
10
10
0
10
-
-
-
-
-
-
-
0
13
10
13
13
0
13
-
-
-
-
-
-
-
0
15
10
15
15
0
15
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
Note
10
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
11
11
Read- Modify-Write Cycle
Symbol
Parameter
Read-Modify-Write Cycle Time
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
OE Hold Time from WE
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
Unit
ns
ns
ns
ns
ns
Note
Min Max Min Max Min Max
133
77
32
47
15
-
-
-
-
-
159
90
38
55
18
-
-
-
-
-
183
102
42
62
20
-
-
-
-
-
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
10
10
10
Refresh Cycle
Symbol
Parameter
CAS Set-up Time
(CAS-before-RAS Refresh Cycle)
CAS Hold Time
(CAS-before-RAS Refresh Cycle)
RAS Precharge to CAS Hold Time
CAS Precharge Time in Normal Mode
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
Min Max Min Max Min Max
10
10
10
10
-
-
-
-
10
10
10
13
-
-
-
-
10
10
10
15
-
-
-
-
Unit
Note
t
CSR
t
CHR
t
RPC
t
CPN
ns
ns
ns
ns
6