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GM71C4403CR 参数 Datasheet PDF下载

GM71C4403CR图片预览
型号: GM71C4403CR
PDF下载: 下载PDF文件 查看货源
内容描述: 1,048,576字× 4BIT CMOS动态RAM [1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 10 页 / 112 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon
GM71C4403C
18. Either t
RCH
or t
RRH
must be satisfied.
19. t
RAS
(min) = t
RWD
(min) + t
RWL
(min) + t
T
in Read - Modify - Write cycle.
20. t
CAS
(min) = t
CWD
(min) + t
CWL
(min) + t
T
in Read - Modify - Write cycle.
21. t
OFF
and t
OFR
are determined by the later rising edge of RAS or CAS.
22. t
CSH
(min) can be achieved when t
RCD
<= t
CSH
(min) - t
CAS
(min).
23. EDO Hi-Z control by OE or WE. OE rising edge disables data outputs. When OE goes high
during CAS high, the data will not come out until next CAS access. When WE goes low
during CAS high, the data will not come out until next CAS access.
24. t
HPC
(min) can be achieved during a series of EDO mode write cycles or EDO mode read
cycles. If both write and read operation are mixed in a EDO mode RAS cycle(EDO mode
mix cycle (1),(2) ) minimum value of CAS cycle (t
CAS
+ t
CP
+ 2t
T
) becomes greater than the
specified t
HPC
(min) value.The value of CAS cycle time of mixed EDO mode is shown in
EDO mode mix cycle (1) and (2).
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