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GM71C4403CR 参数 Datasheet PDF下载

GM71C4403CR图片预览
型号: GM71C4403CR
PDF下载: 下载PDF文件 查看货源
内容描述: 1,048,576字× 4BIT CMOS动态RAM [1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 10 页 / 112 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon
Extended Data Out (EDO) Mode Cycle
Symbol
Parameter
EDO Mode Cycle Time
EDO Mode CAS Precharge Time
EDO Mode RAS Pulse Width
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
EDO Read-Modify-Write Cycle CAS
Precharge to WE Delay Time
EDO Read-Modify-Write Cycle Time
GM71C4403
C-60
GM71C4403
C-70
GM71C4403C
GM71C4403
C-80
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
23
Min Max Min Max Min Max
25
10
-
-
-
-
100,000
t
HPC
t
CP
t
RASP
t
ACP
t
RHCP
t
CPW
t
HPRWC
t
COL
t
COP
t
RCHP
t
DOH
30
13
-
-
40
60
77
-
-
100,000
35
15
-
-
-
-
100,000
12
3,13,17
35
-
-
-
40
-
-
-
45
-
-
-
35
52
66
10
5
35
3
45
67
86
10
CAS Hold Time Referred OE
CAS to OE setup Time
Read Command Hold Time from
CAS Precharge
Output data hold time from CAS low
-
-
-
-
13
5
40
3
-
-
-
-
20
5
45
3
-
-
-
-
Test Mode Cycle
Symbol
Parameter
Test Mode WE Setup Time
Test Mode WE Hold Time
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
Unit
ns
ns
Note
Min Max Min Max Min Max
0
10
-
-
0
10
-
-
0
10
-
-
t
WS
t
WH
Counter Test Cycle
Symbol
Parameter
CAS Precharge Time in Counter Test
Cycle
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
Min Max Min Max Min Max
40
-
40
-
40
-
Unit
Note
t
CPT
ns
7