欢迎访问ic37.com |
会员登录 免费注册
发布采购

LND820 参数 Datasheet PDF下载

LND820图片预览
型号: LND820
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 115 K
品牌: LINEAR_DIMENSIONS [ Linear Dimensions ]
 浏览型号LND820的Datasheet PDF文件第1页浏览型号LND820的Datasheet PDF文件第3页浏览型号LND820的Datasheet PDF文件第4页  
LND820/821/822/823  
ABSOLUTE MAXIMUM RATING  
Symbol  
Parameter  
Max  
2.5  
Units  
ID@Tc=25ºC  
Continuous Drain Current,VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current(1)  
ID@Tc=100ºC  
1.6  
A
IDM  
8.0  
PD @Tc=25ºC  
Power Dissipation  
50  
W
W/ºC  
V
ID@Tc=25ºC  
Linear Derating Factor  
0.40  
±20  
210  
2.5  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy(2)  
Avalanche Current (1)  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy (1)  
Peak Diode Recovery dv/dt(3)  
5.0  
mJ  
V/ns  
3.5  
Operating Junction and Storage  
temperature Range  
-55 to +150  
TSTG  
ºC  
300  
Soldering Temperature, for 10  
seconds  
(1.6mm from case)  
THERMAL RESISTANCE  
Symbol  
RoJC  
Parameter  
Min  
Typ  
Max  
Units  
Junction-to-case  
-
-
-
0.50  
-
2.5  
-
Case-to-Sink, Flat,  
Greased Surface  
RoCS  
ºC/W  
RoJA  
Junction-to-Ambint  
-
62  
Linear Dimensions, Inc. 445 East Ohio Street, Chicago IL 60611 USA tel 312.321.1810 fax 312.321.1830 www.lineardimensions.com •