LND820/821/822/823
ELECTRICAL CHARACTERISTICS
(T
C
=25°C unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/
∆T
J
I
D(on)
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Parameter
Drain-to-source
Breakdown Voltage
Breakdown Voltage Temp.
Coefficient
On-State Drain
Current(Note 2)
Static Drain-to-Source On-
Resistace
Gate Threshold Voltage
Forward
Transconductance
Drain-to-source Leakage
Current (T
C
=125ºC)
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-drain(“Miller”)
Charge
Turn-on Delay Time
Rise time
Turn-off Delay time
Fall time
Internal Drain Inductance
Input Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
LND820/821
LND821/823
LND820/821
LND822/823
LND-820/822
LND821/823
Conditions
V
GS
=0V,
I
D =
250µA
Reference to 25ºC
I
D=
1mA
V
GS
> I
D(on)
x
R
DS(on)
Max, V
GS
=10V
V
GS
=0V,I
D =
1.5A(4)
V
DS
=V
GS,
I
D
=250µA
V
DS
=50V,I
D
=1.5A(4)
V
DS=
500V,V
GS
=0V
V
DS=
400V,V
GS =
0V
V
GS
=-20V
V
GS
=-20V
I
D
=2.1A
V
DS=
400V
V
GS
=10V (4)
V
DD =
250V
I
D
=2.1A
R
G
=18Ω
R
D
=100Ω (4)
Between lead 6mm
(0.25 in.)
From package and
center of die contact
V
GS
=0V
V
DS
=25V
F=1.0 MHz
Min
500
450
-
2.5
2.2
Typ
-
0.59
-
Max
-
-
-
3.0
4.0
Units
V
V/ºC
A
Ω
V
S
µA
µA
nA
2.0
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.0
-
25
250
-
-
-
-
-
8.0
8.6
33
16
4.5
100
-100
24
3.3
13
Q
g
Qqs
nC
t
d(on)
t
r
t
d
(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
ns
nH
7.5
360
92
37
pF
•
Linear Dimensions, Inc.
•
445 East Ohio Street, Chicago IL 60611 USA
•
tel 312.321.1810
•
fax 312.321.1830
•
•
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