LND820/821/822/823
SOURCE-DRAIN RATING AND CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ Max
Units
Continuous Source
Current
Pulsed Source Current
(Body Diode) (1)
IS
-
-
-
-
-
2.5
8.0
1.6
520
MOSFET symbol showing
the integral reverse p-n
junction diode
A
ISM
-
-
TJ=25°C, IS=2.5A,
VSD
Diode Forward Voltage
V
VGS=0V(4)
TJ=25°C, IF=2.1A,
di/dt=100A/µs (4)
trr
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
-
-
nS
Qrr
tON
0.70 1.4
µC
Intrinsic turn-on time is negligible (turn-on is dominated by
LS+LD)
Notes : 1 : Repetitvie rating :pulse width limited by max. junction temperature
2 : VDD=50V, starting TJ =25°C,L=60mH RG=25Ω, IAS =2.5A
3 : ISD 2.5A, di/dt≤50 A/µs, VDD ≤ V(BR)DSS ,TJ≤150°C
≤
4 : Pulse width≤ 300µs; duty cycle≤ 2%
• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com •
LINEAR_DIMENSIONS [ Linear Dimensions ]
