LESHAN RADIO COMPANY, LTD.
MMBT5088LT1
PNP
MMBT5089LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
Collector–Emitter Saturation Voltage
(I
C
=10mAdc,I
B
=1.0mAdc)
Base–Emitter Saturation Voltage
(I
C
=10mAdc,I
B
=1.0mAdc)
V
CE(sat)
—
V
BE(sat)
—
f
0.8
MHz
50
C
cb
—
C
eb
—
h
fe
MMBT5088
MMBT5089
Noise Figure
(I
C
=100µAdc,V
CE
=5.0Vdc, R
S
=10κΩ,f=1.0kHz)
NF
MMBT5088
MMBT5089
—
—
3.0
2.0
350
450
1400
1800
dB
10
—
4.0
pF
—
pF
0.5
Vdc
300
400
350
450
300
400
900
1200
—
—
—
—
Vdc
Min
Max
Unit
—
ON CHARACTERISTICS
DC Current Gain
(I
C
=100µAdc,V
CE
=5.0Vdc)
(I
C
=1.0mAdc,V
CE
=5.0Vdc)
(I
C
= 10mAdc, V
CE
=5.0Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 500
µAdc,V
CE
=5.0Vdc,f=20MHz)
Collector–Base Capacitance
(V
CB
=5.0Vdc,I
E
=0,f=1.0MHz emitter guarded)
Emitter–Base Capacitance
(V
EB
=0.5Vdc,I
C
=0,f=1.0MHz collector guarded)
Small Signal Current Gain
(I
C
=1.0mAdc,V
CE
=5.0Vdc,f=1.0kHz)
T
R
S
i
n
~
e
n
IDEAL
TRANSISTOR
Figure 1.Transistor Noise Model
M18–2/4
LRC [ LESHAN RADIO COMPANY ]
