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MMBT5088LT1 参数 Datasheet PDF下载

MMBT5088LT1图片预览
型号: MMBT5088LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声晶体管( NPN硅) [Low Noise Transistors(NPN Silicon)]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 209 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
MMBT5088LT1 MMBT5089LT1
h
FE
, DC CURRENT GAIN (NORMALIZED)
4.0
3.0
V
2.0
CE
=5.0 V
T
A
=125°C
25°C
1.0
–55°C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
R
θVBE
, BASE– EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
1.0
–0.4
T
J
=25°C
V, VOLTAGE (VOLTS)
0.8
–0.8
0.6
V
BE
@V
CE
= 5.0V
–1.2
0.4
–1.6
T
J
=25°C to 125°C
0.2
–2.0
–55°C to25°C
–0.4
0.01 0.02
V
CE(sat)
@ I
C
/I
B
=10
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
0
0.01 0.02 0.05
0.05
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
0.6
T
J
= 25°C
C
ob
C
eb
C
cb
C
ib
f
T
, CURRENT– GAIN — BANDWIDTH
0.8
500
C, CAPACITANCE (pF)
300
PRODUCT (MHz)
0.4
0.3
200
0.2
100
70
50
1.0
V
CE
= 5.0 V
1.0
0.8
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
T
J
= 25°C
2.0
5.0
10
20
50
100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain — Bandwidth Product
M18–4/4