4 Megabit (512K x 8-Bit) CMOS SRAM
T
ABLE
4. 33C408 R
ECOMMENDED
O
PERATING
C
ONDITIONS
(V
CC
= 5.0 + 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Supply Voltage
Ground
Input High Voltage
1
Input Low Voltage
2
Thermal Impedance
1. V
IH
(max) = V
CC
+2.0V ac (pulse width < 10 ns) for I < 20 mA
2.
V
IL
(min) = -2.0V ac(pulse width < 10 ns) for I < 20 mA
S
YMBOL
V
CC
V
SS
V
IH
V
IL
M
IN
4.5
0
2.2
-0.5
--
M
AX
5.5
0
33C408
U
NIT
V
V
V
V
°C/W
V
CC
+0.5
0.8
1.21
Θ
JC
T
ABLE
5. 33C408 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Current
-20
-25
-30
Standby Power
Supply Current
CMOS Standby Power
Supply Current
Input Capacitance
1
Output Capacitance
1
1. Guaranteed by design.
S
YMBOL
I
LI
I
LO
V
OL
V
OH
I
CC
C
ONDITION
V
IN
= V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
,
V
OUT
=V
SS
to V
CC
I
OL
= 8mA
I
OH
= -4mA
Min cycle, 100% Duty, CS=V
IL
, I
OUT
=0mA,
V
IN
= V
IH
or V
IL
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
--
--
--
1, 2, 3
1, 2, 3
--
--
180
170
160
60
10
mA
mA
M
IN
-2
-2
--
2.4
M
AX
2
2
0.4
--
U
NIT
µA
µA
V
V
mA
I
SB
I
SB1
CS = V
IH
, Min Cycle
CS > V
CC
- 0.2V, f = 0 MHz, V
IN
> V
CC
- 0.2V
or
V
IN <
0.2V
V
IN
= 0V, f = 1MHz, T
A
= 25 °C
V
I/O
= 0V
C
IN
C
I/O
1, 2, 3
4, 5, 6
--
--
7
8
pF
pF
T
ABLE
6. 33C408 AC T
EST
C
ONDITIONS AND
C
HARACTERISTICS
(V
CC
= 5.0 + 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Input Pulse Level
Output Timing Measurement Reference Level
04.16.02 REV 8
M
IN
0.0
--
T
YP
--
--
M
AX
3.0
1.5
U
NITS
V
V
All data sheets are subject to change without notice
3
©2002 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
