4 Megabit (512K x 8-Bit) CMOS SRAM
T
ABLE
10. 33LV408 AC C
HARACTERISTICS FOR
W
RITE
C
YCLE
(V
CC
= 3.3V + 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Write Cycle Time
-20
-25
-30
Chip Select to End of Write
-20
-25
-30
Address Setup Time
-20
-25
-30
Address Valid to End of Write
-20
-25
-30
Write Pulse Width (OE High)
-20
-25
-30
Write Recovery Time
-20
-25
-30
Write to Output in High-Z
-20
-25
-30
Write Pulse Width (OE Low)
-20
-25
-30
Data to Write Time Overlap
-20
-25
-30
End Write to Output Low-Z
-20
-25
-30
S
YMBOL
t
WC
S
UBGROUPS
9, 10, 11
20
25
30
t
CW
9, 10, 11
14
15
17
t
AS
9, 10, 11
0
0
0
t
AW
9, 10, 11
14
15
17
t
WP
9, 10, 11
14
15
17
t
WR
9, 10, 11
0
0
0
t
WHZ
9, 10, 11
--
--
--
t
WP1
9, 10, 11
--
--
--
t
DW
9, 10, 11
9
10
11
t
OW
9, 10, 11
--
--
--
6
7
8
--
--
--
20
25
30
5
5
6
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
M
IN
T
YP
33LV408
M
AX
--
--
--
U
NIT
ns
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
Memory
04.02.04 REV 2
All data sheets are subject to change without notice
6
©2004 Maxwell Technologies
All rights reserved.