PRELIMINARY
SemiWell
Semiconductor
2N7000
Logic N-Channel MOSFET
Features
■
R
DS(on)
(Max 5
Ω
)@V
GS
=10V
R
DS(on)
(Max 5.3Ω )@V
GS
=4.5V
Gate Charge (Typical 0.5nC)
Maximum Junction Temperature Range (150°C)
Symbol
●
3. Drain
■
■
2. Gate
◀
●
●
▲
1. Source
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
TO-92
1
2
3
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
A
= 25
°C)
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (T
A
=25
°C
)
Total Power Dissipation Single Operation (T
A
=70
°C
)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
(Note 1)
Parameter
Value
60
200
500
Units
V
mA
mA
V
W
mW
°C
°C
±
20
0.4
3.2
- 55 ~ 150
300
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
Typ.
-
Max.
312.5
Units
°C/W
January, 2003. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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