2N7000
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0V, ID = 250uA
D = 250uA, referenced to 25 °C
Drain-Source Breakdown Voltage
60
-
-
-
-
V
Δ BVDSS
Δ TJ
/
Breakdown Voltage Temperature
coefficient
I
48
mV/°C
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
1
IDSS
Drain-Source Leakage Current
-
-
uA
1000
VGS = 20V, VDS = 0V
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
100
nA
nA
IGSS
V
GS = -20V, VDS = 0V
-
-
-
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250uA
GS = 10 V, ID = 500mA
VGS = 4.5 V, ID = 75mA
Gate Threshold Voltage
1.0
2.5
V
V
Static Drain-Source On-state
Resistance
-
-
1.55
1.9
5
5.3
RDS(ON)
Ω
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
20
11
3
25
14
4
pF
Coss
Crss
Output Capacitance
V
GS =0 V, VDS =25V, f = 1MHz
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
-
-
-
-
-
-
4
2.5
17
18
15
44
24
0.65
-
VDD =30V, ID =200mA, RG =50Ω
VGS = 10 V
Rise Time
ns
Turn-off Delay Time
Fall Time
(Note 2,3)
7
Qg
Total Gate Charge
Gate-Source Charge
0.5
0.15
V
DS =30V, VGS =4.5V, ID =200mA
(Note 2,3)
Qgs
nC
Qgd
Gate-Drain Charge(Miller Charge)
-
0.2
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Parameter
Maximum Continuous Diode Forward Current
Test Conditions
Min.
-
Typ.
-
Max.
200
Unit.
mA
V
VSD
Diode Forward Voltage
IS =200mA, VGS =0V
(Note 2)
-
-
1.2
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
2/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
MICREL [ MICREL SEMICONDUCTOR ]
