2N7000
Fig 1. On-State Characteristics
V
GS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
Fig 2. Transfer Characteristics
10
0
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
0
150 C
-55 C
o
o
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
0
1
25 C
-1
o
※
Notes :
1. V
DS
= 10V
2. 250µ s Pulse Test
10
10
10
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
3.0
Fig 4. On State Current vs.
Allowable Case Temperature
R
DS(ON)
,
Drain-Source On-Resistance [mΩ ]
I
DR
, Reverse Drain Current [A]
2.5
10
0
V
GS
= 4.5V
V
GS
= 10V
2.0
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
1.5
※
Note : T
J
= 25
℃
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Fig 5. Capacitance Characteristics
50
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Fig 6. Gate Charge Characteristics
12
V
GS
, Gate-Source Voltage [V]
40
10
V
DS
= 30V
8
Capacitance [pF]
30
※
Notes :
1. V
GS
= 0V
2. f=1MHz
V
DS
= 48V
6
C
iss
20
C
oss
10
4
C
rss
0
2
※
Note : I
D
= 200 mA
0
5
10
15
20
25
30
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
3/6
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MICREL [ MICREL SEMICONDUCTOR ]
