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M25P20-VMN6TPB 参数 Datasheet PDF下载

M25P20-VMN6TPB图片预览
型号: M25P20-VMN6TPB
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P20 3V的2Mb串行闪存的嵌入式存储器 [Micron M25P20 2Mb 3V Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 45 页 / 592 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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M25P20 Serial Flash Embedded Memory
Operating Features
To enter the hold condition, the device must be selected, with S# LOW. The hold condi-
tion starts on the falling edge of the HOLD# signal, if this coincides with serial clock (C)
being LOW. The hold condition ends on the rising edge of the HOLD# signal, if this co-
incides with C being LOW. If the falling edge does not coincide with C being LOW, the
hold condition starts after C next goes LOW. Similarly, if the rising edge does not coin-
cide with C being LOW, the hold condition ends after C next goes LOW.
During the hold condition, DQ1 is HIGH impedance while DQ0 and C are Don’t Care.
Typically, the device remains selected with S# driven LOW for the duration of the hold
condition. This ensures that the state of the internal logic remains unchanged from the
moment of entering the hold condition. If S# goes HIGH while the device is in the hold
condition, the internal logic of the device is reset. To restart communication with the
device, it is necessary to drive HOLD# HIGH, and then to drive S# LOW. This prevents
the device from going back to the hold condition.
Figure 5: Hold Condition Activation
C
HOLD#
HOLD condition (standard use)
HOLD condition (nonstandard use)
PDF: 09005aef8456656e
m25p20.pdf - Rev. A 2/13 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2012 Micron Technology, Inc. All rights reserved.