Micron M25P40 Serial Flash Embedded Memory
Functional Description
Functional Description
The M25P40 is an 4Mb (512Kb x 8) serial Flash memory device with advanced write-
protection mechanisms accessed by a high-speed SPI-compatible bus. The device sup-
ports high-performance commands for clock frequency up to 75MHz.
The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM
command. It is organized as 8 sectors, each containing 256 pages. Each page is 256
bytes wide.
The entire memory can be erased using the BULK ERASE command, or it can be erased
one sector at a time using the SECTOR ERASE command.
This data sheet details the functionality of the M25P40 device based on either the
150nm process or on the current 110nm process. The most current device in the 110nm
process has the following additional features and is completely backward compatible
with the 150nm device:
• Maximum frequency (READ DATA BYTES at HIGHER SPEED operation) in the stand-
ard V
CC
range 2.7V to 3.6V equals 75MHz
• Maximum frequency (READ DATA BYTES at HIGHER SPEED operation) in the exten-
ded V
CC
range 2.3V to 2.7V equals 40MHz
• UID/CFD protection feature
Note:
75MHz operation is available only on the V
CC
range 2.7V to 3.6V and for 110nm process
technology devices, identified by process identification digit
4
in the device marking
and process letter
B
in the part number.
Figure 1: Logic Diagram
VCC
DQ0
C
S#
W#
HOLD#
DQ1
VSS
PDF: 09005aef8456654f
m25p40.pdf - Rev. Y 8/12 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
