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MT46V32M8FJ-75Z 参数 Datasheet PDF下载

MT46V32M8FJ-75Z图片预览
型号: MT46V32M8FJ-75Z
PDF下载: 下载PDF文件 查看货源
内容描述: 双倍数据速率DDR SDRAM [DOUBLE DATA RATE DDR SDRAM]
分类和应用: 内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 8 页 / 152 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT46V32M8FJ-75Z的Datasheet PDF文件第1页浏览型号MT46V32M8FJ-75Z的Datasheet PDF文件第3页浏览型号MT46V32M8FJ-75Z的Datasheet PDF文件第4页浏览型号MT46V32M8FJ-75Z的Datasheet PDF文件第5页浏览型号MT46V32M8FJ-75Z的Datasheet PDF文件第6页浏览型号MT46V32M8FJ-75Z的Datasheet PDF文件第7页浏览型号MT46V32M8FJ-75Z的Datasheet PDF文件第8页  
PRELIMINARY
256Mb: x4, x8, x16
DDR333 SDRAM Addendum
FBGA 60-BALL PACKAGE DIMENSION
0.850 ±0.075
FBGA PACKAGE PINOUT
x4 (Top View)
SEATING PLANE
C
1
A
B
6.40
1.80
CTR
0.80 TYP
PIN A1 ID
BALL A1
1.20 MAX
2
3
4
5
6
A
B
C
D
E
F
G
H
J
K
L
M
7
8
9
0.10 C
C
D
E
F
G
H
8.00 ±0.05
61X
∅0.45
SOLDER BALL DIAMETER
REFERS TO POST REFLOW
CONDITION. THE PRE-
REFLOW DIAMETER IS Ø 0.40
BALL A9
J
K
L
11.00
C
L
1.00
TYP
16.00 ±0.10
M
V
SS
Q
NC
V
SS
NC
V
DD
Q
DQ3
NC
V
SS
Q
NC
NC
V
DD
Q
DQ2
NC
V
SS
Q
DQS
V
SS
V
REF
DM
CK
CK#
A12
CKE
A11
A9
A8
A7
A6
A5
A4
V
SS
V
DD
DQ0
NC
DQ1
NC
NC
WE#
RAS#
BA1
A0
A2
V
DD
NC V
DD
Q
V
SS
Q
NC
V
DD
Q
NC
V
SS
Q
NC
V
DD
Q
NC
V
DD
A13
CAS#
CS#
BA0
A10
A1
A3
5.50 ±0.05
x8 (Top View)
Bottom View
1
A
B
C
SUBSTRATE: PLASTIC LAMINATE
2
3
4
5
6
A
B
C
D
E
F
G
H
J
K
L
M
7
8
9
C
L
3.20 ±0.05
4.50 ±0.05
9 .00 ±0.10
D
E
SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb or
62% Sn, 36% Pb, 2%Ag
SOLDER BALL PAD: Ø .33mm
MOLD COMPOUND: EPOXY NOVOLAC
F
G
H
FBGA PACKAGE MARKING
Due to the physical size of the FBGA package, the full
ordering part number is not printed on the package.
Instead the following package code is utilized.
Top mark contains five fields
• Field 1 (Product Family)
DRAM
DRAM - ES
• Field 2 (Product Type)
2.5 Volt, DDR SDRAM, 60-ball
• Field 3 (Width)
x4 devices
x8 devices
x16 devices
• Field 4 (Density / Size)
256Mb
• Filed 5 (Speed Grade)
-6
-75Z
-75
-8
12345
J
K
L
M
V
SS
Q
DQ7
NC
V
DD
Q
NC
V
SS
Q
NC
V
DD
Q
NC
V
SS
Q
V
SS
V
REF
CK
A12
A11
A8
A6
A4
V
SS
DQ6
DQ5
DQ4
DQS
DM
CK#
CKE
A9
A7
A5
V
SS
V
DD
DQ1
DQ2
DQ3
NC
NC
WE#
RAS#
BA1
A0
A2
V
DD
DQ0
V
DD
Q
V
SS
Q
NC
V
DD
Q
NC
V
SS
Q
NC
V
DD
Q
NC
V
DD
A13
CAS#
CS#
BA0
A10
A1
A3
x16 (Top View)
1
2
3
4
5
6
A
B
C
D
E
F
G
H
J
K
L
M
7
8
9
A
B
C
D
D
Z
L
B
C
D
H
J
P
F
C
E
F
G
H
J
K
L
M
V
SS
Q
DQ14
DQ12
DQ10
DQ8
V
REF
DQ15
V
DD
Q
V
SS
Q
V
DD
Q
V
SS
Q
V
SS
CK
A12
A11
A8
A6
A4
V
SS
DQ13
DQ11
DQ9
UDQS
UDM
CK#
CKE
A9
A7
A5
V
SS
V
DD
DQ2
DQ4
DQ6
LDQS
LDM
WE#
RAS#
BA1
A0
A2
V
DD
DQ0
V
SS
Q
V
DD
Q
V
SS
Q
V
DD
Q
V
DD
CAS#
CS#
BA0
A10
A1
A3
V
DD
Q
DQ1
DQ3
DQ5
DQ7
A13
Example top mark for a MT46V32M4FJ-6: DLBFJ
256Mb: x4, x8, x16 DDR333 SDRAM
256Mx4x8x16DDR333_B.p65 – Rev. B; Pub. 10/01
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.