512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Electrical Specifications
Table 11:
Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11; notes appear on pages 51–52
AC Characteristics
Parameter
Access time from CLK (pos. edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (8,192 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank
a
to ACTIVE bank
b
command
Transition time
WRITE recovery time
Exit SELF REFRESH-to-ACTIVE command
CL = 3
CL = 2
Symbol
t
t
AC
-75
Min
Max
6
9
1
1.5
3
3
7.5
9.6
1
2.5
1
1.5
1
1.5
6
9
1
2.5
44
67.5
19
80
19
2
0.3
15
80
1
2.5
48
72
20
80
19
2
0.5
15
80
1
2.5
3
3
8
10
1
2.5
1
2.5
1
2.5
Min
-8
Max
7
9
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
t
CK
ns
ns
ns
Notes
CL = 3
CL = 2
CL = 3
CL = 2
AC (3)
(2)
t
AH
t
AS
t
CH
t
CL
t
CK (3)
t
CK (2)
t
CKH
t
CKS
t
CMH
t
CMS
t
DH
t
DS
t
HZ (3)
t
HZ (2)
t
LZ
t
OH
t
RAS
t
RC
t
RCD
t
REF
t
RFC
t
RP
t
RRD
t
T
t
WR
t
XSR
7
9
120,000
120,000
64
64
1.2
1.2
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. H 6/07 EN
47
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
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