512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM
Ele ct rica l Sp e cifica t io n s
Ta b le 12:
Pa ra m e t e r
AC Fu n ct io n a l Ch a ra ct e rist ics
Notes: 5, 6, 8, 9,11; notes appear on pages 51–52
Sym b o l
-75
-8
Un it s No t e s
tCCD
tCKED
tPED
tDQD
tDQM
tDQZ
tDWD
tDAL
tDPL
tBDL
tCDL
tRDL
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
17
14
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit mode
DQM to input data delay
14
17
17
DQM to data mask during WRITEs
17
DQM to data High-Z during READs
17
WRITE command to input data delay
Data-in to ACTIVE command
15, 21
16, 21
17
Data-in to PRECHARGE command
Last data-in to burst STOP command
17
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH command
16, 21
25
tMRD
tROH(3)
tROH(2)
CL = 3
CL = 2
17
Data-out High-Z from PRECHARGE command
17
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. H 6/07 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
48
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