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MT4LC8M8P4TG-6 参数 Datasheet PDF下载

MT4LC8M8P4TG-6图片预览
型号: MT4LC8M8P4TG-6
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM [DRAM]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 22 页 / 397 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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8 MEG x 8
EDO DRAM
I
CC
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 2, 3, 5, 6) (V
CC
= +3.3V ±0.3V)
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
IH
)
STANDBY CURRENT: CMOS
(RAS# = CAS#
V
CC
- 0.2V; DQs may be left open;
other inputs: V
IN
V
CC
- 0.2V or V
IN
0.2V)
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
OPERATING CURRENT: EDO PAGE MODE
Average power supply current
(RAS# = V
IL
, CAS#, address cycling:
t
PC =
t
PC [MIN])
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
IH
:
t
RC =
t
RC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
REFRESH CURRENT: Extended (“S” version only)
Average power supply current: CAS# = 0.2V or CBR
cycling; RAS# =
t
RAS (MIN); WE# = V
CC
- 0.2V; A0-A11,
OE# and D
IN
= V
CC
- 0.2V or 0.2V (D
IN
may be left open)
REFRESH CURRENT: Self (“S” version only)
Average power supply current: CBR with
RAS#
t
RASS (MIN) and CAS# held LOW; WE# =
V
CC
- 0.2V; A0-A11, OE# and D
IN
= V
CC
- 0.2V or 0.2V
(D
IN
may be left open)
SYMBOL
I
CC
1
SPEED
ALL
4K
8K
REFRESH REFRESH UNITS NOTES
1
1
mA
I
CC
2
I
CC
3
ALL
-5
-6
-5
-6
-5
-6
-5
-6
500
175
165
155
125
175
165
165
155
500
135
125
155
125
135
125
165
155
µA
mA
25
I
CC
4
mA
25
I
CC
5
mA
22
I
CC
6
mA
4, 7
I
CC
7
ALL
400
400
µA
4, 7
I
CC
8
ALL
350
400
µA
4, 7
8 Meg x 8 EDO DRAM
D20_2.p65 – Rev. 5/00
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.