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PC28F128G18FE 参数 Datasheet PDF下载

PC28F128G18FE图片预览
型号: PC28F128G18FE
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB, 256MB,512MB ,1GB的StrataFlash存储器 [128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory]
分类和应用: 存储
文件页数/大小: 118 页 / 1154 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
AADM Mode
Synchronous WRITE Cycles
For synchronous writes, only the address latching cycle(s) are synchronous. Synchro-
nous address latching is depicted in the Synchronous READ Cycles.
The actual WRITE operation (rising WE# edge) is asynchronous and is independent of
CLK. Asynchronous writes are depicted in Asynchronous WRITE Cycles.
System Boot
Systems that use the AADM mode will boot from the bottom 128KB of device memory
because A[MAX:17] are expected to be grounded in-system. The 128KB boot region is
sufficient to perform required boot activities before setting RCR[4] to enable AADM
mode.
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
116
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.