512Mb, 1Gb, 2Gb: P30-65nm
Program and Erase Characteristics
Program and Erase Characteristics
Table 41: Program and Erase Specifications
V
PPL
Parameter
Conventional Word Programming
Program
time
Program
time
Single word
t
PROG/W
V
PPH
Max
456
Min
–
Typ
270
Max
456
Unit Notes
µs
1
Symbol
Min
–
Typ
270
Buffered Programming
Aligned, BP time (32
words)
Aligned, BP time (64
words)
Aligned, BP time (128
words)
Aligned, BP time (256
words)
One full buffer, BP time
(512 words)
Buffered Enhanced Factory Programming
Program
Single byte
BEFP Setup
Erase and Suspend
Erase time
32KB parameter
128KB main
Suspend la- Program suspend
tency
Erase suspend
Erase-to-suspend
Blank Check
Blank check Main array block
Notes:
t
BC/MB
t
ERS/PB
t
ERS/MB
t
SUSP/P
t
SUSP/E
t
ERS/SUSP
t
BEFP/B
t
BEFP/SETUP
t
PROG
–
–
–
–
–
310
310
375
505
900
716
900
1140
1690
3016
–
–
–
–
–
310
310
375
505
900
716
900
1140
1690
3016
µs
1
N/A
N/A
–
–
–
–
–
–
N/A
N/A
0.8
0.8
25
25
500
3.2
N/A
N/A
4.0
4.0
30
30
–
–
–
20
–
–
–
–
–
–
0.5
–
0.8
0.8
25
25
500
3.2
–
–
4.0
4.0
30
30
–
–
µs
1, 2
1
s
µs
1
1, 3
ms
1. Typical values measured at T
C
= +25°C and nominal voltages. Performance numbers are
valid for all speed versions. Excludes system overhead. Sampled, but not 100% tested.
2. Averaged over entire device.
3.
t
ERS/SUSP is the typical time between an initial BLOCK ERASE or ERASE RESUME com-
mand and the a subsequent ERASE SUSPEND command. Violating the specification re-
peatedly during any particular block erase may cause erase failures.
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p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
91
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