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PDSP16330 参数 Datasheet PDF下载

PDSP16330图片预览
型号: PDSP16330
PDF下载: 下载PDF文件 查看货源
内容描述: 毕达哥拉斯处理器 [Pythagoras Processor]
分类和应用:
文件页数/大小: 9 页 / 176 K
品牌: MITEL [ MITEL NETWORKS CORPORATION ]
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PDSP16330/A/B
SWITCHING CHARACTERISTICS
Value
Characteristic
PDSP16330
Min.
*
Input data setup to clock rising edge
Input data Hold after clock rising edge
CEX, CEY Setup to clock rising edge
CEX, CEY Hold aher clock rising edge
FORM, S1:0 Setup to clock rising edge
FORM, S1:0 Hold after clock rising edge
Clock rising edge to valid data
Clock period
Clock high time
Clock low time
Latency
OEM, OEP low to data high data valid
OEM, OEP low to data low data valid
OEM, OEP high to data high impedance
OEM, OEP low to data high impedance
Vcc current (TTL input levels)
15
2
30
0
15
7
5
100
25
25
24
Max.
PDSP16330A PDSP16330B
Min.
12
2
12
0
12
2
5
50
15
15
24
Max.
Min.
12
2
12
0
12
2
5
40
15
15
24
25
25
25
25
225
Max.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
cycles
ns
ns
ns
ns
mA
Units
Conditions
40
25
25
2 x LSTTL + 20pF
24
30
30
30
30
110
24
25
25
25
25
180
24
2 x LSTTL + 20pF
2 x LSTTL + 20pF
2 x LSTTL + 20pF
2 x LSTTL + 20pF
V
CC
= Max
Outputs unloaded
Clock freq. = Max
V
CC
= Max
Outputs unloaded
Clock freq. = Max
Vcc current (CMOS input levels)
70
120
150
mA
NOTES
1. LSTTL is equivalent to I
OH
= 20µA, I
OL
= -0.4mA
2. Current is defined as negative into the device
3. CMOS input levels are defined as: V
IH
= V
DD
- 0.5V, V
IL
= +0.5V
4. All parameters marked * are tested during production.
Parameters marked † are guaranteed by design and characterisation.
5. All timings are dependent on silicon speed. This speed is tested by measuring clock period.
This guarantees all other timings by characterisation and design.
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
cc
-0.5V to + 7.0V
Input voltage, V
IN
-0.5V to VCC + 0.5V
Output voltage, V
our
-0.5V to VCC + 0.5V
Clamp diode current per pin, I
K
(see Note 2)
±18mA
500V
Static discharge voltage (HMB), V
STAT
Storage temperature. T
stg
-65°C to + 150°C
Ambient temperature with
power applied T
amb
:
Commercial
0°C to + 70°C
Industrial
-40°C to + 85°C
Military
-55
°C
to + 125°C
Package power dissipation P
TOT
1200mW
Junction temperature
150°C
THERMAL CHARACTERISTICS
Package Type
AC
GC
θ
JC
°C/W
12
12
θ
JA
°C/W
36
35
NOTES
1. Exceeding these ratings may cause permanent damage.
Functional operatlon under these conditions is not implied.
2. Maximum dissipation or 1 second should not be exceeded;
only one output to be tested at any one time.
3. Exposure to Absoulte Maximum Ratings for extended periods
may affect device reliability.
5