MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54522P and M54522FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
IN8→ 8
GND
9
18
→O1
17
→O2
16
→O3
15
→O4
14
→O5
13
→O6
12
→O7
11
→O8
FEATURES
High breakdown voltage (BV
CEO
≥
40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
�½
OUTPUT
10
→COM
COMMON
Package type 18P4G(P)
NC
1
20
NC
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and interfaces between microcom-
puter output and high-current or high-voltage systems
INPUT
IN1→ 2
IN2→ 3
IN3→ 4
IN4→ 5
IN5→ 6
IN6→ 7
IN7→ 8
IN8→ 9
GND
10
19
→O1
18
→O2
17
→O3
16
→O4
15
→O5
14
→O6
13
→O7
12
→O8
11
→COM
COMMON
�½
OUTPUT
FUNCTION
The M54522P and M54522FP each have eight circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 20kΩ between input transistor bases and input pins.
A spike-killer clamping diode is provided between each out-
put pin (collector) and COM pin. The output transistor emit-
ters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54522FP is enclosed in a molded small flat package,
enabling space-saving design.
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
COM
OUTPUT
20K
INPUT
20K
2K
The eight circuits share the COM and GND.
GND
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
