MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Ta = 25°C, when mounted on board
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Conditions
Output, H
Current per circuit output, L
Ratings
–0.5 ~ +40
400
–0.5 ~ +40
400
40
1.79(P)/1.10(FP)
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
O
Output voltage
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
“H” input voltage
“L” input voltage
Parameter
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Limits
min
0
0
0
8
4
0
typ
—
—
—
—
—
—
max
40
400
Unit
V
I
C
V
IH
V
IL
Duty Cycle
P : no more than 7%
FP : no more than 5%
Duty Cycle
P : no more than 30%
FP : no more than 20%
I
C
≤
400mA
I
C
≤
200mA
mA
200
30
0.5
V
V
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) CEO
V
CE (sat)
I
I
V
F
I
R
h
FE
Parameter
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Test conditions
I
CEO
= 100µA
V
I
= 8V, I
C
= 400mA
V
I
= 4V, I
C
= 200mA
V
I
= 17V
I
F
= 400mA
V
R
= 40V
V
CE
= 4V, I
C
= 300mA, Ta = 25°C
Limits
min
40
—
—
0.3
—
—
1000
typ
+
—
1.15
0.95
0.85
1.5
—
8000
max
—
2.4
1.6
1.8
2.4
100
—
Unit
V
V
mA
V
µA
—
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
+
: The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
t
on
t
off
Parameter
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
Test conditions
Limits
min
—
—
typ
30
930
max
—
—
Unit
ns
ns
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
